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R. Thomas, P. Ehrhart, M. Luysberg, M. Boese, R. Waser: Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metalorganic chemical vapour deposition. J. appl. Phys. 89 (2006) 232902

S. K. Arora, R. G. S. Sofin, I. V. Shvets, M. Luysberg: Anomalous strain relaxation behaviour of Fe3O4/MgO (100) heterostructures grown using molecular beam epitaxy. J. appl. Phys. 100 (2006) 073908

I. Knittel, J. Wei, Y. Zhou, S.K. Arora, I.V. Shvets, M. Luysberg: Observation of antiferromagnetic coupling in epitaxial ferrite films: Phys. Rev. B 74 (2006) 132406

M. Caymax, R. Delhougne, M. Ries, M. Luysberg, R. Loo: Non-selective thin SiGe strain-relaxed buffer layers: Growth and carbon-induced relaxation. Thin Solid Films 508 (2006 260

N. Hueging, M. Luysberg, H. Trinkaus, K. Tillmann, K. Urban: Quantitative Pressure an Strain Field Analysis of Helium Precipitates in Silicon. J. Mat. Sci. 41 (2006) 4454

M. Boese, T. Heeg, J. Schubert, M. Luysberg: Epitaxial growth of scandate/titanate multilayers. J. Mat. Sci. 41 (2006) 4434

A. Dasgupta, P. A. Premkumar, F. Lawrence, L. Houben , P. Kuppusami, M. Luysberg, K.S. Nagaraja, V.S. Raghunathan. Microstructure of thick chromium--nitride coating synthesized using plasma assisted MOCVD technique. Surface & Coatings Technology 201 (2006) 1401

T. Heeg, M. Wagner, J. Schubert, Ch. Buchal, M. Boese, M. Luysberg, E. Cicerrella, J.L. Freeouf: Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications. Microelectronic Engineering 80 (2005) 150.

J. Okumu, C. Dahmen, M. Luysberg, G. von Plessen, and M. Wuttig: Photochromic silver nanoparticles fabricated by sputter deposition. J. Appl. Phys. 97 (2005) 094305.

N. Hueging, M. Luysberg, K. Urban, D. Buca, S. Mantl: Evolution of the defect strucutre in helium implanted SiGe/Si heterostructures investigated by in-situ annealing in a transmission electron microscope. Appl. Phys. Lett. 86 (2005) 042112.

T.E.M. Staab, R.M. Nieminen, M. Luysberg, Th. Frauenheim: Agglomeration of As antisites in As-rich low-temperature GaAs: Nucleation without a critical nucleus size. Phys. Rev. Lett. 95 (2005), 125502.

A. Janotta, Y. Dikce, M. Schmidt, C. Eisele, M. Stutzmann, M. Luysberg, L. Houben: Light-induced modification of a-SiOx (II): Laser crystallization. J. Appl. Phys. 95 (2004), 4060.

L. Houben, M. Luysberg, T. Brammer: Illumination Effects in Holographic Imaging of the Electrostatic Potential in Semiconductors in Transmission Electron Microscopy. Phys. Rev. B 70 (2004), 165330.

K. Tillmann, N. Hueging, H. Trinkaus, M. Luysberg and K. Urban: Quantitative transmission electron microscopy analysis of the pressure of helium-filled cracks in implanted silicon. Microscopy and Microanalysis 10 (2004), 199-214. [pdf-file]

K. Tillmann, M. Luysberg, P. Specht and E.R. Weber: Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs: Be heterostructures against thermally activated intermixing. Thin Solid Films 737 (2003), 74-82.

M. Luysberg, D. Kirch, H. Trinkaus, B. Holländer, St. Lenk, S. Mantl, H.-J. Herzog, T. Hackbarth and P.F.P. Fichtner: Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic SiGe buffer layers on Si (100) substrates. J. appl. Phys. 92 (2002), 4290-4295.

K. Tillmann, M. Luysberg, P. Specht and E.R. Weber: Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs. Ultramicroscopy 93 (2002), 123-137. [pdf-file]

L. Houben, C. Scholten, M. Luysberg, O. Vetterl, F. Finger, and R. Carius: Growth of microcrystalline nip Si solar cells: role of local epitaxy, Journal of Non-Crystalline Solids, 299-302 (2002), 1189. [pdf-file]

H.-J- Herzog, T. Hackbarth, U. Seiler, U. König, B. Holländer, S. Mantl: Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation, IEEE Electron Device Letters, 23 (2002), 485

P. Specht, M. J. Cich, R. Zhao, J. Gebauer, M. Luysberg, E. R. Weber: Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:Be, Physica B 308-310 (2001), 808.

B. Holländer, St. Lenk, S. Mantl, H. Trinkaus, D. Kirch, M. Luysberg, T. Hackbarth, H.-J. Herzog and P.F.P. Fichtner: Strain relaxation of pseudomorphic SiGe/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication, Nuclear Instruments and Methods in Physics Research B 175-177 (2001), 357-367.

J. Herfort, W. Ulrici, M. Moreno, M. Luysberg, K.H. Ploog: Carbon incorporation during growth of GaAs at low temperatures. Physica B 308-310 (2001), 823.

T.E.M. Staab, R.M. Nieminen, J. Gebauer, R. Krause-Rehberg, M. Luysberg, M. Haugk and Th. Frauenheim: Do Arsenic Interstitials Really Exist in As-Rich GaAs, Phys. Rev. Lett. 87 (2001), 045504-1 – 045504-4.

J. Gebauer, F. Börner, R. Krause-Rehberg, T.E.M. Staab, W. Bauer-Kugelmann, G. Kögel, W. Triftshäuser, P. Specht R.C. Lutz, E.R. Weber and M. Luysberg: Defect identification in GaAs grown at low temperatures by positron annihilation, J. Appl. Phys. 87 (2000), 8368.

G. Apostolopoulos, J. Herfort, I. Däweritz, K.H. Ploog and M. Luysberg: Reentrant Mound Formation in GaAs(001) Homoepitaxy Observed by ex situ Atomic Force Microscopy, Phys. Rev. Lett. 84 (2000), 3358 (2000).

U. Siegner, M. Haiml, F. Morier-Grenoud, M. Luysberg, R.C. Lutz, P. Specht, E.R. Weber and U. Keller: Femtosecond nonlinear optics of low-temperature grown semiconductors, Physica B 273-274 (1999), 733.

L. Houben, R. Carius, D. Lundszien, J. Fölsch, F. Finger, M. Luysberg and H. Wagner: Structural properties of microcrystalline silicon-germanium films, Phil. Mag. Lett. 79 (1999), 71-78.

M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht and E.R. Weber: Femtosecond response times and high optical nonlinarity in Beryllium doped low-temperature grown GaAs, Appl. Phys. Lett. 74 (1999), 1269.

M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, R.C. Lutz, P. Specht and E.R. Weber: Optical nonlinearity in low-temperature grown GaAs: microscopic liminations and optimization strategies, Appl. Phys. Lett. 74 (1999), 3134.

P. Specht, R.C. Lutz, R. Zhao, E.R. Weber, W.K. Liu, K. Bacher, F.J. Towner, T.R. Stewart and M. Luysberg: Improvement of MBE-grown LT-GaAs through p-doping with Be and C, J. Vac. Sci. Technol. B 17 (1999), 1200.

R. Schmidt, T. Hauck, M. van der Ahe, Ch. Dieker, D. Meertens, M. Luysberg, H.H. Hardtdegen, D. Schmitz: Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P deposited by MOVPE using N2 or H2 as the carrier gas, J. Cryst. Growth 195 (1998), 124.

O. Vetterl, P. Hapke, F. Finger, L. Houben, M. Luysberg, and H. Wagner: Growth of microcrystalline silicon using the layer-by-layer technique at various plasma excitation frequencies. J. Non-Cryst. Solids 227-230, (1998), 866.

P. Kordos, M. Marso and M. Luysberg: Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness, Appl. Phys. Lett. 72 (1998), 1851.

R. Schmidt, T. Hauck, M. van der Ahe, Ch. Dieker, D. Meertens, M. Luysberg, H.H. Hardtdegen and D. Schmitz: Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P deposited by MOVPE using N2 or H2 as the carrier gas, J. Chryst. Growth 195 (1998), 124.

M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer and R. Krause-Rehberg: Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low-temperature-grown GaAs; J. Appl. Phys. 83 (1998), 561.

L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger and H. Wagner: Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth, Phil. Mag. A 77 (1998) 1447.

L. Houben, M. Luysberg, P. Hapke, O. Vetterl, F. Finger, R. Carius and H. Wagner: Morphological and crystallographic defect properties of microcrystalline silicon: a comparison between different growth modes, Journal of Non-Crystalline Solids 227-230 (1998), 896-900.

M. Luysberg, P. Hapke, F. Finger and R. Carius: Structure and growth of µc-Si:H: Investigation by TEM and Raman spectroscopy on samples prepared at different plasma excitation frequencies, Phil. Mag. A 75 (1997), 31.

M. Luysberg and D. Gerthsen: Microscopic deformation mechanisms in InP single crystals, Phil. Mag. A 76 (1997), 45.

J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn and E.R. Weber: Ga vacancies in low-temperature-grown GaAs identified by slow positrons, Appl. Phys. Lett. 71 (1997), 638.

L. Houben, M. Luysberg, P. Hapke, O. Vetterl, F. Finger, R. Carius and H. Wagner: Morphological and crystallographic defekt characteristics in plasma chemical-vapour-deposition grown microcrystalline silicon: A comparison between different growth modes, J. Non-Cryst. Solids 227-230 (1997), 896-900.

P. Hapke, M. Luysberg, R. Carius, M. Tzolov, F. Finger, H. Wagner: Structural investigation and growth of <n>-type microcrystalline silicon prepared at different plasma excitation frequencies, J. Non-Cryst. Sol. 198-200 (1996), 927.



book contributions

M. Luysberg: Transmissionselektronenmikroskopie, in: Effekte der Physik Editors: M. von Ardenne, G. Musiol, U. Klemrath, Harri-Deutsch Verlag, Hamburg (2005)



   
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