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Nature Communications 6 (2015) 8610

Spectromicroscopic insights for rational design of redox-based memristive devices

by Christoph Bäumer, Christoph Schmitz, Amr H H Ramadan, Hongchu Du, Katharina Skaja, Vitaliy Feyer, Philipp Müller, Benedikt Arndt, Chun-Lin Jia, Joachim Mayer, Roger A De Souza, Claus Michael Schneider, Rainer Waser, and Regina Dittmann

The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging.

In the present study, researchers from the Ernst Ruska-Centre togehter with colleagues from RWTH Aachen University and the Jülich Research Centre elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localised valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilisation layers with slow oxygen transport improves retention times considerably.

Further reading:

Christoph Bäumer, Christoph Schmitz, Amr H H Ramadan, Hongchu Du, Katharina Skaja, Vitaliy Feyer, Philipp Müller, Benedikt Arndt, Chun-Lin Jia, Joachim Mayer, Roger A De Souza, Claus Michael Schneider, Rainer Waser, and Regina Dittmann: Spectromicroscopic insights for rational design of redox-based memristive devices, Nature Communications 6 (2015) 8610.
   
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