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J Appl Phys 114 (2013) 033530

Characterisation of Fe-N nanocrystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

by
András Kovács, Bernhard Schaffer, Sergio Moreno, Jörg Jinschek, Alan Craven, Tomasz Dietl, Alberta Bonanni and Rafal Dunin-Borkowski

Transition metal (TM) cations diluted in non-magnetic compounds can provide localised spins through charge-state-dependent hybridisation with band-states leading to magnetic properties. High temperature ferromagnetism in TM- doped semiconductors is assigned to presence of TM aggregates.

ER-C scientist in collaboration have discovered nanometric inclusions filled with nitrogen that are located adjacent to Fe-N nanocrystals within (Ga,Fe)N layers using scanning transmission electron microscopy (STEM). The density of nitrogen in an individual inclusion was measured using electron energy-loss spectroscopy. Structure and the embedding of Fe-N nanocrystals into the GaN host were studied using high-resolution STEM. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth.

Further reading:

A. Kovács, B. Schaffer, M.S. Moreno, J.R. Jinschek, A.J. Craven, T. Dietl, A. Bonanni, and R.E. Dunin-Borkowski: Characterization of Fe-N nanocrystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy, J Appl Phys 114 (2013) 033530.

   
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